A novel monolithic pixel detector implemented in high-voltage CMOS technology
A novel monolithic pixel detector implemented in high-voltage CMOS technology
复制标题
采用高压 CMOS 技术实现的新型单片像素探测器
DOI：
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发表时间：
2007
期刊：
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通讯作者：
I. Perić
中科院分区：
文献类型：
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作者：
I. Perić
将提出具有100％填充因子的整体像素化粒子检测器的新概念。检测基于反向偏置二极管耗尽区域中的电荷漂移。像素电子设备包括放大器，鉴别器，阈值DAC和数字存储单元，位于传感器的阴极内（N-Well）。两个具有不同像素矩阵和测试结构的测试芯片已在0.35 MUM高压CMOS过程中制造。将提出电测试的结果和带有放射源的测量结果。
Novel concept for monolithic pixelated particle detector with 100 % fill-factor will be presented. The detection is based on the charge drift in the depleted zone of the reverse biased diode. Pixel electronics, which includes amplifier, discriminator, threshold-tune DAC and a digital storage cell, is placed inside the cathode of the sensor (N-well). Two test chips with different pixel matrices and test structures have been fabricated in a 0.35 mum high-voltage CMOS process. The results of the electrical tests and measurements with radioactive sources will be presented.