Performance of temperature-stable RF MEMS switched capacitors under high RF power conditions
Performance of temperature-stable RF MEMS switched capacitors under high RF power conditions
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DOI：
10.1109/mwsym.2010.5517234
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发表时间：
2010-05
期刊：
影响因子：
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通讯作者：
I. Reines;B. Pillans;Gabriel M. Rebeiz
中科院分区：
文献类型：
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作者：
I. Reines;B. Pillans;Gabriel M. Rebeiz
本文提出了一种采用圆形波束结构的温度稳定的射频MEMS并联电容开关。圆形开关减少了应力变化对环境温度的影响，在- 5-125°C范围内的平均拉入电压斜率仅为- 55.8 mV/°C。该装置在10 GHz连续射频功率下进行了仿真和测试。结果表明，由于射频功率吸收，MEMS桥的温度分布不均匀，导致上态电容减小，弹簧常数增大。这种组合导致开关在受测试设置限制的5.2 W功率水平下不会遭受自致动。射频功率处理测量值与仿真值吻合较好。
This paper presents a temperature-stable RF MEMS shunt capacitive switch which employs a circular beam geometry. The circular switch reduces the effect of stress changes versus ambient temperature and results in a average pull-in voltage slope of only −55.8 mV/°C from −5‒125°C. This novel device is simulated and tested under continuous RF power at 10 GHz. Results show that the non-uniform temperature distribution of the MEMS bridge, due to the RF power absorbtion, leads to a decreasing up-state capacitance and increasing spring constant. This combination results in a switch that does not suffer from self-actuation up to power levels of 5.2 W, limited by the test setup. The RF power handling measurements are in good agreement with simulations.