Physical Properties of Tungsten Oxide Films Deposited by a Reactive Sputtering Method
Physical Properties of Tungsten Oxide Films Deposited by a Reactive Sputtering Method
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反应溅射法沉积氧化钨薄膜的物理性能
DOI：
10.1143/jjap.30.1841
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
Shigeo Suzuki
中科院分区：
文献类型：
--
作者：
K. Kaneda;Shigeo Suzuki
采用反应溅射法在Ar+O2气氛中制备了氧化钨薄膜，研究了氧化钨薄膜作为X射线掩模吸收体的物理性能。薄膜的密度、应力和结构强烈地依赖于溅射条件，特别是总工作压力和氧分压。在11~18 mTorr的总工作压力和8.3%的氧分压范围内沉积了表面光滑的氧化钨薄膜，其密度约为13.5 g/cm ~ 3。氧化钨薄膜的应力对压力的依赖性远小于钨薄膜。无应力氧化钨薄膜无纤维结构，表面和横截面光滑。
Tungsten oxide films were deposited in ambient gas (Ar+O2) by a reactive sputtering method, and their physical properties as an X-ray mask absorber were investigated. The density, stress and structure of the films strongly depend upon the sputtering condition, especially on the total working pressure and the oxygen partial pressure. Smooth tungsten oxide films were deposited in the range of 11~18 mTorr total working pressure and in the oxygen partial pressure of 8.3% and their density was about 13.5 g/cm3. Pressure dependence of the stress of tungsten oxide films was much smaller than that of tungsten films. The stress-free films of tungsten oxide had no fibrous structure and their surface and cross section were smooth.