Electro-Deposition of Thin Si and Ge Films Based on Ballistic Hot Electron Injection
Electro-Deposition of Thin Si and Ge Films Based on Ballistic Hot Electron Injection
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基于弹道热电子注入的硅和锗薄膜电沉积
DOI：
10.1149/2.002405ssl
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发表时间：
2014
影响因子：
--
通讯作者：
J. Shirakashi
中科院分区：
文献类型：
--
作者：
N. Koshida;A. Kojima;T. Ohta;R. Mentek;B. Gelloz;N. Mori;J. Shirakashi
一个替代的湿沉积过程中的薄IV族薄膜的热电子注入到解决方案下证明。纳米晶硅（nc-Si）器件由薄Au/Ti膜、阳极氧化nc-Si层和n+-Si衬底组成，在SiCl 4和GeCl 4溶液中用作表面发射冷阴极。当nc-Si发射器单独驱动而不使用任何反电极时，薄Si和Ge膜沉积在发射表面上，既没有副产物也没有污染物。与传统的干法工艺相比，这种沉积模式的具体特点进行了讨论。
An alternative wet deposition process of thin group-IV films is demonstrated under the hot electron injection into solutions. A nanocrystalline silicon (nc-Si) device, composed of a thin Au/Ti film, an anodized nc-Si layer, and an n+-Si substrate, operates as a surface-emitting cold cathode in SiCl 4 and GeCl 4 solutions. When the nc-Si emitter is driven alone without using any counter electrodes, thin Si and Ge films are deposited on the emitting surface with neither byproducts nor contaminations. The specific features of this deposition mode are discussed in comparison with the conventional dry process.