Accelerated Life Test for SiC Schottky Blocking Diodes in High-Temperature Environment
Accelerated Life Test for SiC Schottky Blocking Diodes in High-Temperature Environment
复制标题
高温环境下 SiC 肖特基阻断二极管的加速寿命测试
DOI：
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发表时间：
2009
影响因子：
2
通讯作者：
P. Godignon
中科院分区：
文献类型：
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作者：
E. Maset;E. Sanchis;J. Ejea;A. Ferreres;J. Jordán;V. Esteve;P. Brosselard;X. Jordà;M. Vellvehí;P. Godignon
本文报道了具有高温工作能力(高达270℃)的碳化硅肖特基二极管的寿命试验。这些300-V-3-A二极管是为满足欧洲航天局对水星的任务比皮科伦坡要求而设计的。寿命测试包括在270℃下对这些二极管施加5A的直流电流应力600小时或更长时间。对不同的二极管技术进行了测试和比较。在典型的具有厚铝金属层的钛或镍肖特基二极管上，这些可靠性测试表明，由于铝的扩散，肖特基界面和二极管顶表面都发生了退化。使用W作为肖特基金属可以消除正向电压漂移，产生稳定的金属-半导体界面特性。使用厚的金金属化可以减少表面和粘接劣化。最终的二极管在270℃下表现出很高的稳定性。
This paper reports on the life tests of silicon carbide Schottky diodes with high-temperature operation capability (up to 270degC). These 300-V-3-A diodes have been designed to meet the BepiColombo requirements, a European Space Agency mission to Mercury. The life test consisted in a dc current stress of 5 A applied to these diodes at 270degC for 600 h or more. Different diode technologies have been tested and compared. On typical Ti or Ni Schottky diodes with thick aluminum metal layer, these reliability tests revealed degradation at both the Schottky interface and the diode top surface due to aluminum diffusion. The use of W as Schottky metal allows eliminating the forward voltage drift producing stable metal-semiconductor interface properties. The use of thick gold metallization allows reducing the surface and bonding degradation. The final diodes demonstrated high stability at 270degC.