Polarization effects and energy band diagram in AlGaN/GaN heterostructure
Polarization effects and energy band diagram in AlGaN/GaN heterostructure
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DOI：
10.1007/s00339-007-3880-5
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发表时间：
2007-03
期刊：
影响因子：
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通讯作者：
J. Osvald
中科院分区：
文献类型：
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作者：
J. Osvald
我们报告了一种用于计算AlGaN/GaN异质结构能带图的经典方法。当外加偏压作用在结构上时，我们也可以用这种方法计算出能带图和载流子浓度。结构的肖特基势垒侧的势比泊松方程和Schrödinger方程的自洽解更精确地定义。该方法还可以计算出二维气体的能带轮廓和载流子浓度对压电电荷的依赖关系。
We report on a classical approach used to calculate energy band diagrams of AlGaN/GaN heterostructures. We were able to calculate the band diagram and carrier concentrations by this method also when the external bias was applied on the structure. The potential on the Schottky barrier side of the structure is defined more exactly than in a self-consistent solution of Poisson and Schrödinger equations. Dependence of the band profile and the carrier concentration of the two-dimensional gas on the piezoelectric charge can also be calculated by this approach.