Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
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DOI：
10.1038/nmat1284
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发表时间：
2005-01-01
期刊：
影响因子：
41.2
通讯作者：
Kawasaki, M
中科院分区：
文献类型：
--
作者：
Tsukazaki, A;Ohtomo, A;Kawasaki, M
自从蓝色发光二极管（LED）（1）的成功演示以来，随着对显示、照明和信息存储的需求增长，用于制造短波长LED和二极管激光器的潜在材料已经吸引了越来越多的兴趣（2-4）。氧化锌具有包括大的激子结合能的实质性优点，如通过在光激发上的有效激子激光所证明的（5，6）。几个小组已经假设使用掺杂有氮、砷或磷的p型ZnO（7-10），甚至p-n结（11-13）。然而，掺杂剂和生长技术的选择仍然存在争议，p型ZnO的可靠性仍然存在争议（14）。如果ZnO要生产持久耐用的器件，必须像其他化合物半导体中的协议一样提高外延层的质量（15）。在这里，我们报告高品质的非掺杂薄膜的电子迁移率超过了在散装。我们使用了一种新的技术来制造p型氧化锌可重复。在室温下展示了同质p-i-n结的紫色电致发光。
Since the successful demonstration of a blue light-emitting diode (LED)(1), potential materials for making short-wavelength LEDs and diode lasers have been attracting increasing interest as the demands for display, illumination and information storage grow(2-4). Zinc oxide has substantial advantages including large exciton binding energy, as demonstrated by efficient excitonic lasing on optical excitation(5,6). Several groups have postulated the use of p-type ZnO doped with nitrogen, arsenic or phosphorus(7-10), and even p-n junctions(11-13). However, the choice of dopant and growth technique remains controversial and the reliability of p-type ZnO is still under debate(14). If ZnO is ever to produce long-lasting and robust devices, the quality of epitaxial layers has to be improved as has been the protocol in other compound semiconductors(15). Here we report high-quality undoped films with electron mobility exceeding that in the bulk. We have used a new technique to fabricate p-type ZnO reproducibly. Violet electroluminescence from homostructural p-i-n junctions is demonstrated at room-temperature.