Face-selective tungstate ions drive zinc oxide nanowire growth direction and dopant incorporation
Face-selective tungstate ions drive zinc oxide nanowire growth direction and dopant incorporation
复制标题
面选择性钨酸根离子驱动氧化锌纳米线生长方向和掺杂剂掺入
DOI：
10.1038/s43246-020-00063-5
复制
发表时间：
2020-08-13
影响因子：
7.8
通讯作者：
Yanagida, Takeshi
中科院分区：
文献类型：
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作者：
Liu, Jiangyang;Nagashima, Kazuki;Yanagida, Takeshi
由于复杂的掺杂剂掺入途径，定制无机纳米线的元素掺杂仍然是一个重要的挑战。在这里，我们报告的钨酸根离子的面选择性控制生长方向和掺杂剂掺入的水热氧化锌纳米线。在合成过程中在纳米线表面上引入钨酸根离子出乎意料地增强了侧壁1010平面处的成核，而掺杂剂掺入仅发生在（0001）平面上。这种冲突的面选择性行为导致不均匀的掺杂剂分布。密度泛函理论计算结果表明，该表面选择性行为可以解释在每个氧化锌晶面上的钨酸根离子的配位结构的影响。此外，我们展示了一个合理的策略来控制钨掺杂氧化锌纳米线的形貌和元素掺杂。控制纳米线的生长过程对于定制其性能至关重要。在此，钨酸根离子在氧化锌纳米线的特定表面平面上的存在导致纳米线沿着特定晶面生长和化学掺杂。
Tailoring the elemental doping of inorganic nanowires remains an important challenge due to complex dopant incorporation pathways. Here we report that the face-selectivity of tungstate ions controls growth direction and dopant incorporation of hydrothermal zinc oxide nanowires. The introduction of tungstate ions on nanowire surface during synthesis unexpectedly enhances nucleation at sidewall 1010 planes, while dopant incorporation occurs only on (0001) planes. This conflicting face-selective behavior leads to inhomogeneous dopant distribution. Density functional theory calculations reveal that the face-selective behavior can be interpreted in terms of the effect of coordination structure of the tungstate ions on each zinc oxide crystal plane. In addition, we demonstrate a rational strategy to control the morphology and the elemental doping of tungsten-doped zinc oxide nanowires. Controlling the growth processes of nanowires is vital for tailoring their properties. Here, the presence of tungstate ions on specific surface planes of zinc oxide nanowires causes nanowire growth and chemical doping along specific crystal planes.