Performances of miniature microstrip detectors made on oxygen enriched p-type substrates after very high proton irradiation
Performances of miniature microstrip detectors made on oxygen enriched p-type substrates after very high proton irradiation
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DOI：
10.1016/j.nima.2004.07.153
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发表时间：
2004-12-11
影响因子：
1.4
通讯作者：
Turner, PR
中科院分区：
文献类型：
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作者：
Casse, G;Allport, PP;Turner, PR
在FZ p型体（n-in-p）上具有n型注入读出带的硅微带探测器在重辐照后显示出优于n型硅（p-in-n）中更标准的p带的上级收集特性。它也是公认的，富氧的n型硅衬底表现出更好的性能，在充电强子照射后的全耗尽电压的退化方面，比用于高能物理探测器的标准FZ硅。硅微带探测器结合了氧化和n带读出（n-in-n）的优点，实现了对带电强子的高辐射耐受性。然而，n-in-n探测器的制造需要双面处理，导致比标准p-in-n更复杂和昂贵的设备。一个更便宜的单面选择，仍然结合了这些优点，是使用n-in-p器件。P型FZ晶片已经通过氧化层的高温扩散而富氧，并成功地用于加工微型（1 x 1 cm（2））微带探测器。这些探测器已经在CERN/PS T7辐照区用24 GeV/c质子辐照，辐照面积达到7.5 × 10（15）cm（-2）。我们报告的结果与这些照射探测器的电荷收集效率作为所施加的偏置电压的函数。(C)2004 Elsevier B. V.保留所有权利。
Silicon microstrip detectors with n-type implant read-out strips on FZ p-type bulk (n-in-p) show superior charge collection properties, after heavy irradiation, to the more standard p-strips in n-type silicon (p-in-n). It is also well established that oxygen-enriched n-type silicon substrates show better performance, in terms of degradation of the full depletion voltage after charged hadron irradiation, than the standard FZ silicon used for high energy physics detectors. Silicon microstrip detectors combining both the advantages of oxygenation and of n-strip read-out (n-in-n) have achieved high radiation tolerance to charged hadrons. The manufacturing of n-in-n detectors though requires double-sided processing, resulting in more complicated and expensive devices than standard p-in-n. A cheaper single-sided option, that still combines these advantages, is to use n-in-p devices. P-type FZ wafers have been oxygen-enriched by high temperature diffusion from an oxide layer and succesfully used to process miniature (1 x 1 cm(2)) microstrip detectors. These detectors have been irradiated with 24 GeV/c protons in the CERN/PS T7 irradiation area up to similar to7.5 x 10(15) cm(-2). We report results with these irradiated detectors in terms of the charge collection efficiency as a function of the applied bias voltage. (C) 2004 Elsevier B.V. All rights reserved.