InGaAs x-ray photodiode for spectroscopy
InGaAs x-ray photodiode for spectroscopy
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DOI：
10.1088/2053-1591/abbaf9
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发表时间：
2020-10
影响因子：
2.3
通讯作者：
M. Whitaker;G. Lioliou;A. Krysa;A. M. Barnett
中科院分区：
文献类型：
--
作者：
M. Whitaker;G. Lioliou;A. Krysa;A. M. Barnett
采用金属有机气相外延法制备了In0.53Ga0.47As p+-i-n+ x射线光电二极管，研究了其作为新型x射线探测器的性能。探测器连接到一个定制的低噪声电荷敏感前置放大器和标准读出电子设备，以产生一个x射线光谱仪。检测器和前置放大器在233 K（−40℃）的温度下工作。在5.9 keV下获得了1.18 keV±0.06 keV的能量分辨率。这是InGaAs （GaInAs）首次被证明能够进行光谱光子计数x射线探测。
A prototype In0.53Ga0.47As p+-i-n+ x-ray photodiode, fabricated from material grown by metalorganic vapour phase epitaxy, was investigated as a novel detector of x-rays. The detector was connected to a custom low-noise charge sensitive preamplifier and standard readout electronics to produce an x-ray spectrometer. The detector and preamplifier were operated at a temperature of 233 K (−40 °C). An energy resolution of 1.18 keV ± 0.06 keV Full Width at Half Maximum at 5.9 keV was achieved. This is the first time InGaAs (GaInAs) has been shown to be capable of spectroscopic photon counting x-ray detection.