Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE
Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE
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MBE 生长的室温晶圆键合四结太阳能电池的电子辐照研究
DOI：
10.1016/j.solmat.2017.06.046
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发表时间：
2017-11-01
影响因子：
6.9
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Dai, Pan;Ji, Lian;Yang, Hui
针对空间应用环境，研究了1 MeV电子辐照对全固态分子束外延生长的GaInP/GaAs//InGaAsP/InGaAs四结太阳电池的影响。暴露于1 MeV电子辐照（1 x 15 e/cm（2））后，寿命终止剩余因子约为85%。通过光谱响应和透射电子显微镜研究了晶片键合界面。1-MeV的电子辐照进行个别的InGaAsP和InGaAs单结电池，分别。四结电池的退化主要是由于InGaAsP和InGaAs子电池上的损坏而不是键合界面。
For application in space environments, the effect of 1-MeV electron irradiation on wafer-bonded GaInP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all solid state molecular beam epitaxy was studied. After exposure to 1-MeV electron irradiation at 1 x 15 e/cm(2), an end of life remaining factor of approximately 85% was obtained. The wafer bonding interface was studied by spectral response and transmission electron microscopy. 1-MeV electron irradiation was conducted on the individual InGaAsP and InGaAs single junction cell, respectively. The degradation of the four -junction cell was mainly due to damage on the InGaAsP and InGaAs subcells rather than the bonding interface.