Cohesive Zone Model Applied to Creep Crack Initiation at an Interface Edge between Submicron Thick Films
Cohesive Zone Model Applied to Creep Crack Initiation at an Interface Edge between Submicron Thick Films
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DOI：
10.1177/1056789509103651
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发表时间：
2010-04
影响因子：
4.2
通讯作者：
Do Van Truong;T. Kitamura
中科院分区：
文献类型：
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作者：
Do Van Truong;T. Kitamura
裂纹在亚微米厚膜之间的界面边缘处开始，并导致微电子器件的故障。在这项研究中，内聚区模型方法与内聚法的基础上的损伤力学的概念来模拟锡和硅薄膜之间的界面边缘的蠕变裂纹萌生。采用微悬臂梁弯曲试样对Sn/Si界面的分层进行了实验研究。在有限元程序ABAQUS的UEL用户子程序中，将内聚法应用于单元。通过拟合试验和有限元模拟得到的位移-时间曲线，标定了表征粘聚力规律的参数。结果表明，应力奇异性的阶数随时间增加，在裂纹萌生时，其值有一个明显的跳跃。
A crack initiates at an interface edge between submicron thick films and leads to the malfunction of microelectronic devices. In this study, the cohesive zone model method with a cohesive law based on the damage mechanics concept is developed to simulate the creep crack initiation at an interface edge between tin and silicon films. Experiments on delamination at the Sn/Si interface using a micro-cantilever bend specimen were conducted. The cohesive law is applied to the elements in the UEL user subroutine in the finite element code ABAQUS. The parameters characterizing the cohesive law are calibrated by fitting displacement-time curves obtained by experiments and FEM simulations. It is revealed that the order of stress singularity increases with time and has a significant jump in its value at the crack initiation.