GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE
GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE
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DOI：
10.1088/0957-4484/24/11/115304
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发表时间：
2013-03-22
期刊：
影响因子：
3.5
通讯作者：
Fukui, Takashi
中科院分区：
文献类型：
--
作者：
Ikejiri, Keitaro;Ishizaka, Fumiya;Fukui, Takashi
研究了选择区金属有机气相外延在多晶硅薄膜上生长砷化镓纳米线的生长机理。导线结构选择性地生长在多晶硅衬底的掩膜开口中。线状结构的呈现率与多晶硅衬底的生长条件和沉积温度密切相关。对生长形状和生长特性的评估表明，在多晶硅衬底上生长的GaAs NWs与在单晶GaAs或Si衬底上生长的传统GaAs NWs具有相同的生长机制。实验表明，增大Si晶粒尺寸和/或提高Si沉积温度都可以提高丝组织的成品率。为理解多晶硅上NW生长而提出的生长模型是基于掩膜开孔尺寸、硅晶粒尺寸和生长条件的。控制生长方式的能力有望在多晶硅薄层上形成具有复杂结构的NWs。
The growth mechanism of GaAs nanowires (NWs) grown on polycrystalline silicon (poly-Si) thin films using selective-area metalorganic vapor-phase epitaxy was investigated. Wire structures were selectively grown in the mask openings on a poly-Si substrate. The appearance ratio of wire structures strongly depended on the growth conditions and deposition temperature of the poly-Si substrate. Evaluation of the grown shapes and growth characteristics revealed that GaAs NWs grown on a poly-Si substrate have the same growth mechanism as conventional GaAs NWs grown on a single-crystalline GaAs or Si substrate. Experiments showed that the wire structure yield can be improved by increasing the Si grain size and/or increasing the Si deposition temperature. The growth model proposed for understanding NW growth on poly-Si is based on the mask opening size, the Si grain size, and the growth conditions. The ability to control the growth mode is promising for the formation of NWs with complex structures on poly-Si thin layers.