Microstructure of Mn-doped γ-Ga2O3 epitaxial film on sapphire (0001) with room temperature ferromagnetism
Microstructure of Mn-doped γ-Ga2O3 epitaxial film on sapphire (0001) with room temperature ferromagnetism
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DOI：
10.1063/1.2713349
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发表时间：
2007-03
影响因子：
3.2
通讯作者：
Rong Huang;Hiroyuki Hayashi;F. Oba;I. Tanaka
中科院分区：
文献类型：
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作者：
Rong Huang;Hiroyuki Hayashi;F. Oba;I. Tanaka
利用脉冲激光沉积技术在蓝宝石（0001）平面上生长出具有室温铁磁性的mn掺杂Ga2O3薄膜。通过选择区域电子衍射、高分辨率透射电子显微镜（HRTEM）、x射线能量色散光谱和电子能量损失光谱，与未掺杂的薄膜进行比较，详细研究了mn掺杂薄膜的微观结构。通过对衬底[21¯1¯0]Al2O3和[101¯0]Al2O3带轴的衍射分析发现，mn掺杂薄膜为尖晶石结构缺陷的γ-Ga2O3相，未掺杂薄膜为β-Ga2O3相。从界面区通过电子衍射和HRTEM测定薄膜与基体之间的取向关系为（2¯01）β-Ga2O3∕∕(0001)Al2O3和[102]β-Ga2O3∕∕[21¯1¯0]Al2O3或[1¯02¯]β-Ga2O3∕∕[21¯1¯0]Al2O3； (111)γ-Ga2O3∕(0001)Al2O3和[21¯1¯0]γ-Ga2O3∕[21¯1¯0]Al2O3或[2¯11]γ-Ga2O3∕[21¯1¯0]Al2O3。
Mn-doped Ga2O3 thin film showing room temperature ferromagnetism has been grown on a sapphire (0001) plane by using a pulsed-laser deposition technique. The microstructure of the Mn-doped film is investigated in detail using selected-area electron diffraction, high-resolution transmission electron microscopy (HRTEM), x-ray energy-dispersive spectroscopy, and electron energy-loss spectroscopy, in comparison with an undoped film. Careful diffraction analysis with the [21¯1¯0]Al2O3 and [101¯0]Al2O3 zone axes of the substrates reveals that the Mn-doped film shows the γ-Ga2O3 phase with a defective spinel structure, while the undoped film shows the β-Ga2O3 phase. The orientation relationship between the film and substrate is determined by electron diffraction and HRTEM from the interface region to be (2¯01)β-Ga2O3∕∕(0001)Al2O3 and [102]β-Ga2O3∕∕[21¯1¯0]Al2O3 or [1¯02¯]β-Ga2O3∕∕[21¯1¯0]Al2O3 for the undoped film, and (111)γ-Ga2O3∕∕(0001)Al2O3 and [21¯1¯]γ-Ga2O3∕∕[21¯1¯0]Al2O3 or [2¯11]γ-Ga2O3∕∕[21¯1¯0]Al2O3 for...