New types of resonant tunneling currents at Si-p/n junctions: one-dimensional model calculation
New types of resonant tunneling currents at Si-p/n junctions: one-dimensional model calculation
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DOI：
10.35848/1347-4065/abf782
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发表时间：
2021-05-01
影响因子：
1.5
通讯作者：
Nakayama, Takashi
中科院分区：
文献类型：
--
作者：
Cho, Sanghun;Nakayama, Takashi
利用电子波包的时间演化模拟方法，研究了Si p/n结中施主态和受主态之间的共振以及p/n结中三角形量子阱势中的共振所引起的新型共振隧穿电流.结果表明，隧道电流增强这些共振，因为共振态作为带间隧穿跃迁的垫脚石，有效隧穿距离变短。我们还表明，这种增强的隧道电流不仅可以发生在间接带隙硅系统，但也直接带隙半导体系统。
New types of resonant tunneling currents at Si-p/n junctions, which are caused by the resonance between the donor and acceptor-dopant states and by the resonance states in a triangular quantum-well-like potential in the p/n junctions, are studied by a time-evolution simulation of electron wave packets. It is shown that the tunneling currents are enhanced by these resonances because the resonance states work as step stones for the inter-band tunneling transitions and the effective tunneling distance becomes short. We also show that such enhancement of tunneling currents can occur in not only indirect band-gap Si systems but also direct band-gap semiconductor systems.