A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability
A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability
复制标题
适用于多功能 MVL 应用的 GaN/InGaN/AlGaN MQW RTD，具有更高的逻辑稳定性
DOI：
10.1088/1674-4926/39/7/074004
复制
发表时间：
2018-07-01
影响因子：
5.1
通讯作者：
Wang, Dejun
中科院分区：
文献类型：
--
作者：
Zhang, Haipeng;Zhang, Qiang;Wang, Dejun
为了提高GaN基共振隧穿二极管（RTD）设计的传统多值逻辑（MVL）电路的逻辑稳定性，提出了一种GaN/InGaN/AlGaN多量子阱（MQW）RTD。在TCAD平台上，采用数值非平衡绿色函数（NEGF）方法求解耦合薛定谔方程和泊松方程，对RTD进行了数值模拟。所提出的RTD在外延技术中逐层生长。仿真结果表明，该器件的电流-电压特性比传统器件具有更宽的总负微分电阻区，且在室温下具有明显的磁滞回线。适当增加AlGaN势垒层中Al的含量，可以增加MVL电路的总负阻区宽度和磁滞回线宽度，有利于提高MVL电路的逻辑稳定性。此外，由所提出的RTD或所提出的RTD和增强型HEMT控制的RTD组成的互补谐振隧穿晶体管对能够在小于3.3V的不同电源电压下产生多功能MVL模式，这对于实现更复杂的MVL功能数字集成电路和系统非常有吸引力用更少的设备，超高速线性或非线性ADC以及内置超高速ADC功能的电压传感器。
To improve the logic stability of conventional multi-valued logic (MVL) circuits designed with a GaN-based resonate tunneling diode (RTD), we proposed a GaN/InGaN/AlGaN multi-quantum well (MQW) RTD. The proposed RTD was simulated through solving the coupled Schrodinger and Poisson equations in the numerical non-equilibrium Green’s function (NEGF) method on the TCAD platform. The proposed RTD was grown layer by layer in epitaxial technologies. Simulated results indicate that its current-voltage characteristic appears to have a wider total negative differential resistance region than those of conventional ones and an obvious hysteresis loop at room temperature. To increase the Al composite of AlGaN barrier layers properly results in increasing of both the total negative differential resistance region width and the hysteresis loop width, which is helpful to improve the logic stability of MVL circuits. Moreover, the complement resonate tunneling transistor pair consisted of the proposed RTDs or the proposed RTD and enhanced mode HEMT controlled RTD is capable of generating versatile MVL modes at different supply voltages less than 3.3 V, which is very attractive for implementing more complex MVL function digital integrated circuits and systems with less devices, super high speed linear or nonlinear ADC and voltage sensors with a built-in super high speed ADC function.