Magnetic semiconductors based on cobalt substituted ZnO
Magnetic semiconductors based on cobalt substituted ZnO
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DOI：
10.1063/1.1556115
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发表时间：
2003-05
影响因子：
3.2
通讯作者：
K. Rode;A. Anane;R. Mattana;J. Contour;O. Durand;R. Lebourgeois
中科院分区：
文献类型：
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作者：
K. Rode;A. Anane;R. Mattana;J. Contour;O. Durand;R. Lebourgeois
研究了脉冲激光沉积在蓝宝石（0001）衬底上钴取代ZnO薄膜的微观结构和磁性能。利用反射高能电子衍射原位监测优化了生长条件。我们发现铁磁薄膜需要在低氧分压（<10−6 Torr）下生长。含钴量为25%的薄膜在室温下具有铁磁性，具有明显的面外各向异性。我们一直在寻找铁磁信号的虚假来源，但一无所获。
We have investigated the microstructure and the magnetic properties of cobalt substituted ZnO thin films deposited on sapphire (0001) substrates by pulsed laser deposition. We have optimized the growth condition using in situ monitoring by reflection high-energy electron diffraction. We found that ferromagnetic films need to be grown at low oxygen partial pressure (<10−6 Torr). Films with 25% of Co are ferromagnetic at room temperature with clear out-of-plane anisotropy. We have looked for spurious origins of the ferromagnetic signal and found none.