Improvement of crystal quality of nonpolar a-plane GaN by in-situ surface modification
Improvement of crystal quality of nonpolar a-plane GaN by in-situ surface modification
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DOI：
10.1016/j.matlet.2012.11.104
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发表时间：
2013-02
影响因子：
3
通讯作者：
K. Song;D. Kang;C. Shin;Hogyoung Kim;Jong Min Kim
中科院分区：
文献类型：
--
作者：
K. Song;D. Kang;C. Shin;Hogyoung Kim;Jong Min Kim
采用金属有机物化学气相沉积法生长非极性a面GaN，并在生长过程中通过生长中断引入原位表面改性工艺，提高了a面GaN的晶体质量，避免了额外的非原位工艺，是提高a面GaN晶体质量的有效途径。用原位反射强度和原子力显微镜对a面GaN生长表面进行了监测。采用高分辨X射线衍射和室温光致发光技术，以266 nm Nd-YAG激光为激发源，研究了a面GaN的特性。
Nonpolar a-plane GaN was grown by metal–organic chemical vapor deposition and in-situ surface modification process was introduced by growth interruption during the growth for higher crystal quality a-plane GaN, which is an effective way to improve the crystal quality of a-plane GaN without additional ex-situ process. Growing surface of a-plane GaN was monitored by in-situ reflectance intensity and atomic force microscopy. The characteristics of a-plane GaN were investigated by high resolution X-ray diffraction and room temperature photoluminescence measurements with a 266nm Nd-YAG laser as an excitation source.