Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor
Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor
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DOI：
10.4028/www.scientific.net/msf.527-529.175
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发表时间：
2006-10
期刊：
影响因子：
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通讯作者：
M. F. Macmillan;M. Loboda;G. Chung;E. Carlson;J. Wan
中科院分区：
文献类型：
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作者：
M. F. Macmillan;M. Loboda;G. Chung;E. Carlson;J. Wan
在单晶片和批式CVD系统中，利用氯硅烷/丙烷化学在4 H SiC n+衬底上进行SiC薄膜的外延生长。在固定气体成分、温度和压力的条件下，改变氯硅烷流量，生长速率在4 ~ 20 μm/hr之间，研究了温度、压力和气体成分对本底掺杂、外延层均匀性和外延缺陷产生的影响。有意的n型和p型掺杂已被证明在载流子范围1×1018-1×1020/cm 3。本文首次报道了使用氯硅烷前驱体生长高质量的未掺杂，n和p掺杂SiC外延层。
Epitaxial growth of SiC films was performed on 4H SiC n+ substrates utilizing a chlorosilane/propane chemistry in both single wafer and batch CVD systems. Variations of the chlorosilane flow under fixed conditions of gas composition, temperature and pressure resulted in growth rates between 4 to 20 μm/hr. Fixing the chlorosilane flow rate to achieve a growth rate of approximately 4 μm/hr, the effects of temperature, pressure and gas composition on background dopant incorporation, epitaxial layer uniformity and epitaxial defect generation were investigated. Intentional n and p-type doping has been demonstrated over the carrier range 1×1018-1×1020/cm3. This paper presents the first reported of use of chlorosilane precursors to grow high quality undoped, n and p doped SiC epilayers.