Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
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DOI：
10.1063/1.3123814
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发表时间：
2009-04
影响因子：
4
通讯作者：
A. Yang;H. Song;H. Wei;Xue-Yuan Liu;J. X. Wang;X. Lv;P. Jin;S. Yang;Q. Zhu;Z. Wang-
中科院分区：
文献类型：
--
作者：
A. Yang;H. Song;H. Wei;Xue-Yuan Liu;J. X. Wang;X. Lv;P. Jin;S. Yang;Q. Zhu;Z. Wang-
纤锌矿极性C面和非极性A面InN/ZnO异质结的价带偏移直接由X射线光电子能谱确定为1.76 +/- 0.2 eV和2.20 +/- 0.2 eV。异质结以I型跨接配置形成，具有0.84 +/-0.2eV和0.40 +/-0.2eV的导带偏移。自发极化效应是引起它们价带偏移量不同的主要原因。我们的研究结果表明InN/ZnO异质结具有重要的面依赖性，并且A面异质结的价带偏移更接近“本征”价带偏移。
The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76 +/- 0.2 eV and 2.20 +/- 0.2 eV. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 0.84 +/- 0.2 eV and 0.40 +/- 0.2 eV. The difference of valence band offsets of them mainly attributes to the spontaneous polarization effect. Our results show important face dependence for InN/ZnO heterojunctions, and the valence band offset of A-plane heterojunction is more close to the "intrinsic" valence band offset.