Electrical properties of Si‐N films deposited on silicon from reactive plasma
Electrical properties of Si‐N films deposited on silicon from reactive plasma
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反应等离子体沉积在硅上的 Si-N 薄膜的电学特性
DOI：
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发表时间：
1978
期刊：
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通讯作者：
T. Smith
中科院分区：
文献类型：
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作者：
A. K. Sinha;T. Smith
由于反应等离子体沉积的 Si-N 薄膜可能在硅集成电路技术中具有一定的优势，因此我们评估了它们的电性能，并将其与 CVD Si3N4 进行了比较。使用 C-V 和 I-V 测量研究了成分在 0.75?Si/N?1.9 范围内的各种薄膜，后者的温度高达 200°C。主要传导模式似乎是 Frenkel-Poole 发射；这与观察到的线性 I-vs-V1/2 关系和各种参数的大小一致。发现电阻率（2×106 V/cm 时范围为 104–1021 Ωcm）和介电强度（范围为 0.8×106 至 8×106 V/cm）取决于薄膜成分和尚未定义的结构参数（对于 Si/N？0.75）。 Si-N 和 Si 之间的界面与高密度的表面电荷 (≳1012 cm−2) 和大的捕获不稳定性相关。
Because reactive‐plasma‐deposited Si‐N films might offer certain advantages in silicon integrated‐circuit technology, we have evaluated their electrical properties and compared them with those of CVD Si3N4. Various films with compositions in the range 0.75?Si/N?1.9 were studied using C‐V and I‐V measurements, the latter at temperatures up to 200 °C. The dominant conduction mode appears to be Frenkel‐Poole emission; this is consistent with the observed linear I‐vs‐V1/2 relationship and magnitudes of various parameters. The resistivities (range 104–1021 Ω cm at 2×106 V/cm) and dielectric strengths (range 0.8×106 to 8×106 V/cm) are found to depend upon the film composition and on an as yet undefined structural parameter (for Si/N?0.75). The interface between Si‐N and Si is associated with a high density of surface charge (≳1012 cm−2) and a large trapping instability.