Double-dot charge transport in Si single-electron/hole transistors
Double-dot charge transport in Si single-electron/hole transistors
复制标题
Si 单电子/空穴晶体管中的双点电荷传输
DOI：
10.1063/1.126105
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发表时间：
2000
影响因子：
4
通讯作者：
D. Tsui
中科院分区：
文献类型：
--
作者：
L. Rokhinson;L. J. Guo;S. Chou;D. Tsui
我们研究了由硅绝缘体晶圆制成的超小型硅量子点晶体管的传输。在高温（4<T<100 K）下，器件显示出通过光刻定义的点的单电子或单空穴传输。在 T<4 K 时，通过器件的电流具有多点传输的特征。通过对具有双点特性的样品中的传输的分析，我们得出结论，在围绕光刻定义点的热生长栅极氧化物内部形成了额外的点。
We studied transport through ultrasmall Si quantum-dot transistors fabricated from siliconon-insulator wafers. At high temperatures, 4<T<100 K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T<4 K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot.