New shapes in (100) Si using KOH and EDP etches
New shapes in (100) Si using KOH and EDP etches
复制标题
使用 KOH 和 EDP 蚀刻在 (100) Si 中形成新形状
DOI：
10.1088/0960-1317/2/2/002
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发表时间：
1992
影响因子：
2.3
通讯作者：
L. Rosengren
中科院分区：
文献类型：
--
作者：
Y. Bäcklund;L. Rosengren
Wet chemical etching in EDP, pure KOH and KOH with isopropyl alcohol (KOH/IPA) are known to etch different crystal planes with different etch rates. It is shown in this work that etching in EDP or KOH/IPA reverses the etch-rate ratios of (100) and (110) planes, as compared to etching in pure KOH. This can be used to reveal other relatively slow etching planes, other than (111), to be used in new structures. V-grooves, retro-reflector ridges and mesa structures were fabricated bounded by (110) planes with 45 degrees angles to the (100) surface. Also, by using a corner-compensated mask aligned in the (100) direction and etched in pure aqueous KOH, free-standing cubic studs bounded by (100) planes were fabricated.
