Micromachining of polymers using atmospheric pressure inductively coupled helium plasma localized by a scanning nanopipette probe microscope
Micromachining of polymers using atmospheric pressure inductively coupled helium plasma localized by a scanning nanopipette probe microscope
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DOI：
10.1088/1361-6439/abf845
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发表时间：
2021-04
影响因子：
2.3
通讯作者：
Shuntaro Toda;K. Nakazawa;A. Ogino;M. Shimomura;F. Iwata
中科院分区：
文献类型：
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作者：
Shuntaro Toda;K. Nakazawa;A. Ogino;M. Shimomura;F. Iwata
我们开发了一个大气压电感耦合等离子体（ICP）局部照射系统，使用石英毛细管喷嘴（纳米移液管）与亚微米直径的尖端孔径的材料表面的精细加工。使用该系统，在微米尺度上蚀刻涂覆在玻璃基板上的聚甲基丙烯酸甲酯（PMMA）膜。精细蚀刻是通过使用自制的扫描探针显微镜的定位能力，由精确放置在表面附近的纳米移液管定位的ICP来实现的。PMMA膜的局部蚀刻表面通过在蚀刻过程之后立即扫描纳米移液管成像来确认。对于定量评价，然后使用原子力显微镜获取表面相同位置的形貌图像。ICP的刻蚀速率是低频大气压等离子体射流的20倍。刻蚀孔的深度随辐照功率、辐照时间的增加和辐照距离的减小而增加。此外，成功地实现了亚微米宽度的线槽图案化。所提出的系统预计将用于各种应用，如加工和修复的微型器件。
We developed a local irradiation system for atmospheric pressure inductively coupled plasma (ICP) using a quartz capillary nozzle (nanopipette) with a sub-micrometer diameter tip aperture for fine processing of material surface. Using this system, a polymethyl methacrylate (PMMA) film coated on a glass substrate was etched at the micrometer scale. Fine etching was achieved by the ICP localized by the nanopipette precisely placed near the surface, using the positioning capability of a homemade scanning probe microscope. The locally etched surface of the PMMA film was confirmed by imaging immediately after the etching process by scanning the nanopipette. For quantitative evaluation, the topographical image of the same location of the surface was then acquired using an atomic force microscope. The etching rate of the ICP was 20 times higher than that of the low-frequency atmospheric pressure plasma jet. The depth of the etched holes increased with increasing applied power and irradiation time and decreasing irradiation distance. In addition, line groove patterning with sub-micrometer width was successfully achieved. The proposed system is expected to be used in various applications such as processing and repairing of microdevices.