Electromigration-induced damage in bamboo Al interconnects
Electromigration-induced damage in bamboo Al interconnects
复制标题
电迁移引起的竹铝互连损伤
DOI：
10.1007/s11664-002-0171-y
复制
发表时间：
2002
影响因子：
2.1
通讯作者：
E. Arzt
中科院分区：
文献类型：
--
作者：
J. Böhm;C. Volkert;R. Mönig;T. Balk;E. Arzt
用扫描电镜观察了竹铝互连段电迁移过程中的损耗和丘状形成过程。通过在底部Al/TiN界面外延添加Al，直接在片的阳极端形成山丘。耗尽从阴极端不均匀地发生，并且在给定电流密度下，当导空和丘之间的距离达到电迁移的临界长度时停止。提出了一个修正的漂移速度方程，该方程考虑了非均匀损耗的影响，并预测了非均匀损耗的互连比均匀损耗的互连更可靠。
Depletion and hillock formation were examined in-situ in a scanning electron microscope (SEM) during electromigration of bamboo Al interconnect segments. Hillocks formed directly at the anode ends of the segments by epitaxial addition of Al at the bottom Al/TiN interface. Depletion occurred nonuniformly from the cathode end and stopped once the distance between the leading void and the hillock reached the critical length for electromigration at the given current density. A modified equation for the drift velocity is proposed, which includes the effect of nonuniform depletion and predicts that interconnects with nonuniform depletion are more reliable than those with uniform depletion.