ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon
ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon
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ULTRARAM：低能耗、高耐用性、硅基复合半导体存储器
DOI：
10.1002/aelm.202101103
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发表时间：
2022
影响因子：
6.2
通讯作者：
Hodgson P
中科院分区：
文献类型：
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作者：
Hodgson P
ULTRARAM是一种非易失性存储器，有可能在通过三势垒共振隧穿异质结构访问的浮栅中实现快速、超低能电子存储。在这里，它的实施是在Si衬底上报告的;这是迈向具有成本效益的大规模生产的重要一步。使用分子束外延的样品生长开始于AlSb成核层的沉积以播种GaSb缓冲层的生长，随后是III-V存储器外延层。制造的单单元存储器在≤10 ms持续时间的2.5 V编程/擦除脉冲后显示出清晰的0/1逻辑状态对比度，这对于10和20 µm器件来说是非常快的开关速度。此外，对于给定的单元尺寸，低电压和每单位面积的小器件电容的组合导致比动态随机存取存储器和闪存低几个数量级的切换能量。对器件的扩展测试显示，保持时间超过1000年，无退化耐久性超过107个编程/擦除周期，超过了GaAs衬底上类似器件的最新结果。
ULTRARAM is a nonvolatile memory with the potential to achieve fast, ultralow‐energy electron storage in a floating gate accessed through a triple‐barrier resonant tunneling heterostructure. Here its implementation is reported on a Si substrate; a vital step toward cost‐effective mass production. Sample growth using molecular beam epitaxy commences with deposition of an AlSb nucleation layer to seed the growth of a GaSb buffer layer, followed by the III–V memory epilayers. Fabricated single‐cell memories show clear 0/1 logic‐state contrast after ≤10 ms duration program/erase pulses of ≈2.5 V, a remarkably fast switching speed for 10 and 20 µm devices. Furthermore, the combination of low voltage and small device capacitance per unit area results in a switching energy that is orders of magnitude lower than dynamic random access memory and flash, for a given cell size. Extended testing of devices reveals retention in excess of 1000 years and degradation‐free endurance of over 107program/erase cycles, surpassing very recent results for similar devices on GaAs substrates.