Evaluation of the radiation tolerance of several generations of SiGe heterojunction bipolar transistors under radiation exposure
Evaluation of the radiation tolerance of several generations of SiGe heterojunction bipolar transistors under radiation exposure
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DOI：
10.1016/j.nima.2007.05.328
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发表时间：
2007-09
影响因子：
1.4
通讯作者：
J. Metcalfe;D. Dorfan;A. Grillo;A. Jones;F. Martinez-McKinney;P. Mekhedjian;M. Mendoza;H. Sadrozinski;G. Saffier-Ewing;A. Seiden;E. Spencer;M. Wilder;R. Hackenburg;J. Kierstead;S. Rescia;J. Cressler;G. Prakash;A. Sutton
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文献类型：
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作者：
J. Metcalfe;D. Dorfan;A. Grillo;A. Jones;F. Martinez-McKinney;P. Mekhedjian;M. Mendoza;H. Sadrozinski;G. Saffier-Ewing;A. Seiden;E. Spencer;M. Wilder;R. Hackenburg;J. Kierstead;S. Rescia;J. Cressler;G. Prakash;A. Sutton
For the potential use in future high luminosity applications in high energy physics (HEP) (e.g., the large hadron collider (LHC) upgrade), we evaluated the radiation tolerance of several candidate technologies for the front-end of the readout application-specific integrated circuit (ASIC) for silicon strip detectors. The devices investigated were first, second and third-generation silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs). The DC current gain as a function of collector current was measured before and after irradiation with 24GeV protons up to fluences of 1016p/cm2and with a60Co gamma source up to 100Mrad. The analog section of an amplifier for silicon strip detectors typically has a special front transistor, chosen carefully to minimize noise and usually requiring a larger current than the other transistors, and a large number of additional transistors used in shaping sections and for signal-level discrimination. We discuss the behavior of the three generations of transistors under proton and gamma exposure, with a particular focus on issues of noise, power and radiation limitations.
