Hopping Conductivity in CuIr2S4 Spinel Compound: I. Empirical Model for Electronic Configuration and Mechanism of Metal–Insulator Transition
Hopping Conductivity in CuIr2S4 Spinel Compound: I. Empirical Model for Electronic Configuration and Mechanism of Metal–Insulator Transition
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CuIr2S4 尖晶石化合物中的跳跃电导率：I. 电子构型和金属-绝缘体转变机制的经验模型
DOI：
10.1143/jpsj.75.074706
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发表时间：
2006
影响因子：
1.7
通讯作者：
A. Burkov
中科院分区：
文献类型：
--
作者：
K. Yagasaki;T. Nakama;M. Hedo;Y. Uwatoko;Y. Shimoji;S. Notsu;K. Uchima;N. Matsumoto;S. Nagata;H. Okada;H. Fujii;H. Yoshida;H. Kimura;Y. Yamaguchi;A. Burkov
研究了两种类型的尖晶石化合物CuIr 2 S 4样品：样品1是在保护的Ar气氛下合成的，以避免氧污染；样品2在制备过程中暴露在氧气中。根据扫描电子显微镜的结果，样品2中的氧浓度是样品1的5倍。然而，无论氧浓度如何，两个样品的金属-绝缘体转变(MIT)温度是相同的。对于样品1和样品2，绝缘相的电导率σ分别在T≤120K和T≤50K时与EXP[-(T*/T)1/2]成正比，而在金属相中的电阻率ρ与LIP中的σ成正比。与温度无关的抗磁磁化率和热电势的温度依赖性表明，该化合物不是正常的活化型半导体。由实验结果估算出CuIr_2-S_4的电子组态为一级近似值。..。
Two types of spinel compound CuIr 2 S 4 samples were investigated: sample 1 was synthesized under protective Ar atmosphere to avoid contamination by oxygen, whereas sample 2 was exposed to oxygen during preparation procedure. According to the results of scanning electron microscopy, the oxygen concentration in sample 2 is 5 times higher than in sample 1. However, the metal–insulator transition (MIT) temperature is the same for both samples irrespective of oxygen concentration. The conductivity σ in the insulating phase (LIP) is proportional to exp [-( T * / T ) 1/2 ] at T ≤120 K for sample 1 and at T ≤50 K for sample 2, while in the metallic phase the resistivity ρ is proportional to the same function of σ in LIP for both samples. Temperature independent diamagnetic susceptibility and temperature dependence of thermopower suggest that this compound is not a normal activation-type semiconductor. The electronic configuration of CuIr 2 S 4 is estimated to a first approximation from the experimental results. ...
影响因子：
8.6
作者：
Khomskii, DI;Mizokawa, T
通讯作者：
Mizokawa, T