Multilevel Information Storage in Ferroelectric Polymer Memories
Multilevel Information Storage in Ferroelectric Polymer Memories
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DOI：
10.1002/adma.201101511
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发表时间：
2011-09-22
影响因子：
29.4
通讯作者：
Gelinck, Gerwin H.
中科院分区：
文献类型：
--
作者：
Tripathi, Ashutosh K.;van Breemen, Albert J. J. M.;Gelinck, Gerwin H.
铁电聚合物存储器中的多阶信息存储提出了基于铁电共聚物P（VDF-TrFE）（聚偏氟乙烯-三氟乙烯）的多位存储器件。采用热压印的方法在铁电聚合物薄膜上制备了多层微结构。通过将印迹铁电聚合物薄膜分别作为绝缘层和栅介质层，实现了电容器和薄膜晶体管存储器中的多位存储。
Multilevel Information Storage in Ferroelectric Polymer Memories Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly( vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of a spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin-film transistor memory is realized by implementing imprinted ferroelectric polymer films as the insulator and gate dielectric layers, respectively.