Admittance–voltage profiling of AlxGa1−xN/GaN heterostructures: Frequency dependence of capacitance and conductance
Admittance–voltage profiling of AlxGa1−xN/GaN heterostructures: Frequency dependence of capacitance and conductance
复制标题
AlxGa1−xN/GaN 异质结构的导纳电压分析：电容和电导的频率依赖性
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
O. Ambacher
中科院分区：
文献类型：
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作者：
K. Köhler;W. Pletschen;B. Godejohann;S. Müller;H. Menner;O. Ambacher
AlxGa 1 −xN/GaN异质结构的导纳-电压分布用于确定FET器件在50 Hz至1 MHz频率范围内的频率依赖性电容和电导。名义上未掺杂的低压金属有机物气相外延结构是在Al含量为30%的情况下生长的。在Al0.3Ga0.7N层生长之前，在一个结构中放置另外的1 nm厚的AlN中间层。对于低于108 Hz的频率，使用等效电路来表示材料的电或介电性质是方便的，这是一种广泛使用的方法，例如在阻抗谱中。我们要强调频率依赖的导纳-电压分布和相应的等效电路之间的关系，以复杂的介电函数。德拜和德鲁德模型被用来描述的频率依赖的导纳分布在一个范围内的二维电子气的耗尽开始。电容和电导频率配置文件中安装的输入…
Admittance–voltage profiling of AlxGa1−xN/GaN heterostructures was used to determine the frequency dependent capacitance and conductance of FET devices in the frequency range from 50 Hz to 1 MHz. The nominally undoped low pressure metal-organic vapor-phase epitaxy structures were grown with an Al-content of 30%. An additional 1 nm thick AlN interlayer was placed in one structure before the Al0.3Ga0.7N layer growth. For frequencies below 108 Hz it is convenient to use equivalent circuits to represent electric or dielectric properties of a material, a method widely used, for example, in impedance spectroscopy. We want to emphasize the relation between frequency dependent admittance–voltage profiling and the corresponding equivalent circuits to the complex dielectric function. Debye and Drude models are used for the description of the frequency dependent admittance profiles in a range of depletion onset of the two-dimensional electron gas. Capacitance- and conductance-frequency profiles are fitted in the ent...