A UNIFIED MODEL FOR THE FLICKER NOISE IN METAL OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
A UNIFIED MODEL FOR THE FLICKER NOISE IN METAL OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
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DOI：
10.1109/16.47770
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发表时间：
1990-03-01
影响因子：
3.1
通讯作者：
CHENG, YC
中科院分区：
文献类型：
--
作者：
HUNG, KK;KO, PK;CHENG, YC
讨论了一个统一的闪烁噪声模型，该模型综合了数量波动和相关表面迁移率波动机制。后者归因于波动的氧化物电荷的库仑散射效应。该模型具有类似于数涨落理论的函数形式，但在某些偏差条件下，它可能会减少到与Hooge的经验表达式兼容的形式。该模型可以统一文献中报道的噪声数据，而无需对噪声产生机制做任何特别的假设。具体而言，该模型可以预测的经验Hooge参数的正确的幅度和偏差的依赖。仿真闪烁噪声特性与实验噪声数据进行了比较与电路仿真面向闪烁噪声模型的基础上的新配方。对于不同工艺制造的MOS晶体管，在线性区和饱和区的计算结果与测量结果吻合良好。工作表明，MOS晶体管中的闪烁噪声可以完全用陷阱电荷涨落机制来解释，它产生了移动的载流子数涨落和相关的表面迁移率涨落。<>
A unified flicker noise model which incorporates both the number fluctuation and the correlated surface mobility fluctuation mechanism is discussed. The latter is attributed to the Coulombic scattering effect of the fluctuating oxide charge. The model has a functional form resembling that of the number fluctuation theory, but at certain bias conditions it may reduce to a form compatible with Hooge's empirical expression. The model can unify the noise data reported in the literature, without making any ad hoc assumption on the noise generation mechanism. Specifically, the model can predict the right magnitude and bias dependence of the empirical Hooge parameter. Simulated flicker noise characteristics obtained with a circuit-simulation-oriented flicker noise model based on the new formulation were compared with experimental noise data. Excellent agreement between the calculations and measurement was observed in both the linear and saturation regions for MOS transistors fabricated by different technologies. The work shows that the flicker noise in MOS transistors can be completely explained by the trap charge fluctuation mechanism, which produces mobile carrier number fluctuation and correlated surface mobility fluctuation.<>