Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method
Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method
复制标题
用积分电荷法测量4H-SiCMOS电容器的快速近界面陷阱
DOI：
10.1109/access.2021.3102614
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发表时间：
2021-01-01
期刊：
影响因子：
3.9
通讯作者：
Jadli, Utkarsh
中科院分区：
文献类型：
--
作者：
Chaturvedi, Mayank;Dimitrijev, Sima;Jadli, Utkarsh
采用积分电荷法研究了4 H-SiC MOS电容器中存在的氧化物陷阱，这些陷阱在强积累区和耗尽区都是激活的。该方法是基于在高频电压脉冲响应MOS电容器的充电和放电电压的测量。这种方法可以识别响应时间在数百纳秒量级的陷阱。结果表明，在4 H-SiC MOSFET中，导带底以上能级的近界面陷阱密度增加，是降低沟道载流子迁移率的活性缺陷。
Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the strong accumulation and depletion regions were characterized by an integrated-charge method. The method is based on the measurement of charging and discharging voltages across MOS capacitors in response to high-frequency voltage pulses. This method can identify traps with response times in the order of hundreds of nanoseconds. The results reveal an increasing density of near-interface traps with energy levels above the bottom of the conduction band, which are the active defects reducing the channel-carrier mobility in 4H-SiC MOSFETs.