High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H2 Plasma Annealing Method
High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H2 Plasma Annealing Method
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纳米沉积/氢气等离子体退火法制备高质量a-SiGe:H合金
DOI：
10.1143/jjap.34.l203
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发表时间：
1995
影响因子：
1.5
通讯作者：
Masataka Hirose Masataka Hirose
中科院分区：
文献类型：
--
作者：
Jun Xu;S. Miyazaki;Masataka Hirose Masataka Hirose
采用传统的二极管型PECVD系统，通过交替沉积几个纳米厚的a-SiGe：H层和氢等离子体退火，制备了高质量的氢化非晶SiGe合金。随着氢等离子体退火时间的增加，薄膜的氢含量和光学带隙均减小。在禁带宽度为1.45eV的样品中，获得了高的光电导（5.2×10- 5S/cm）和高的光敏度（5×104）。它还表明，光诱导的光电导退化显着减少氢等离子体退火。在100 mW/cm 2光照360 min后，光电导保持在初始值的约80%。
High-quality hydrogenated amorphous SiGe alloys have been prepared by alternating the deposition of a few-nanometer-thick a-SiGe:H layer and hydrogen plasma annealing using a conventional diode-type PECVD system. Both the hydrogen content and optical band gap are decreased with increasing hydrogen plasma annealing time. A high photoconductivity ( 5.2×10-5 S/cm) and a high photosensitivity of 5×104 have been obtained for samples with an optical bandgap of 1.45 eV. It is also shown that the light-induced photoconductivity degradation is significantly reduced by hydrogen plasma annealing. The photoconductivity remains at about 80% of the initial value after 360 min light illumination at 100 mW/cm2.