Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals
Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals
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DOI：
10.1103/physrevb.86.100102
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发表时间：
2012-09-06
影响因子：
3.7
通讯作者：
Chaussende, D.
中科院分区：
文献类型：
--
作者：
Debelle, A.;Backman, M.;Chaussende, D.
在3C-SiC被核能沉积损伤的情况下，证明了快速重离子（SHI）辐照过程中产生的强烈电子能量沉积的愈合效应。实验（离子通道实验）和计算（分子动力学模拟）的研究提供了一致的指示SHI照射后的无序减少。此外，这两种方法建立SHI诱导的再结晶发生在非晶-结晶界面。回收过程是明确占热尖峰现象。
The healing effect of intense electronic energy deposition arising during swift heavy ion (SHI) irradiation is demonstrated in the case of 3C-SiC damaged by nuclear energy deposition. Experimental (ion channeling experiments) and computational (molecular dynamics simulations) studies provide consistent indications of disorder decrease after SHI irradiation. Furthermore, both methods establish that SHI-induced recrystallization takes place at amorphous-crystalline interfaces. The recovery process is unambiguously accounted for by the thermal spike phenomenon.