Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared
Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared
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DOI：
10.1063/1.5082895
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发表时间：
2019-04-15
影响因子：
4
通讯作者：
Marshall, A. R.
中科院分区：
文献类型：
--
作者：
Craig, A. P.;Al-Saymari, F.;Marshall, A. R.
我们报告的设计，生长，加工和表征的谐振腔增强型光电二极管的中波红外线在类似于3.72 μ m的GaSb。使用AlAsSb/GaSb反射镜、AlAsSb阻挡层和间隔层以及薄的96 nm InAsSb吸收体，我们观察到比文献中常见的InAsSb nBn探测器更上级的暗电流和探测性能，在250 K和300 K下测量的峰值比探测率值分别为8 × 10（10）和1 × 10（10）cm Hz（1/2）W-1。在相同的温度范围内，检测器响应的线宽为60%，其中由于谐振腔的增强类似于20倍。我们估计，这些设备可以接近或略高于对300 K场景的宽带探测器施加的背景限制红外性能限制。(C)2019年作者。
We report the design, growth, processing, and characterization of resonant cavity enhanced photodiodes for the midwave infrared at similar to 3.72 mu m on GaSb. Using AlAsSb/GaSb mirrors, AlAsSb barrier and spacer layers and a thin 96 nm InAsSb absorber, we observed dark current and detectivity behavior superior to common InAsSb nBn detectors in the literature, with peak specific detectivity values of 8 x 10(10) and 1 x 10(10) cm Hz(1/2) W-1 measured at 250 K and 300 K, respectively. In the same temperature range, the linewidth of the detector response was 60% where the enhancement due to the resonant cavity was similar to 20x. We estimate that the devices can operate close to, or slightly above, the background-limited infrared performance limit imposed on broadband detectors for a 300 K scene. (C) 2019 Author(s).