The effects of interfaces stability on mechanical properties, thermal conductivity and helium irradiation of V/Cu nano-multilayer composite
The effects of interfaces stability on mechanical properties, thermal conductivity and helium irradiation of V/Cu nano-multilayer composite
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DOI：
10.1016/j.matdes.2022.110535
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发表时间：
2022-03-15
影响因子：
8.4
通讯作者：
Liu, C. S.
中科院分区：
文献类型：
--
作者：
Zhang, L. F.;Gao, R.;Liu, C. S.
界面工程是开发高性能结构材料的重要策略。本研究采用交叉累积轧制键合（CARB）方法制备了不同层厚的体V/Cu纳米多层膜。研究了不同层厚的V/Cu纳米多层膜的界面稳定性及其对热导率和氦辐照的影响。显微组织分析、拉伸和硬度测试结果表明，V/Cu纳米多层膜在500 ℃退火1 h后仍保持较高的力学性能和良好的热稳定性。然而，强度急剧下降后，高温退火，因为微观结构的不稳定性，这是密切相关的晶粒的纵横比。退火过程中多层膜的球化促进了电子的有效输运，减弱了电子的散射，有利于热导率的提高。V/Cu纳米多层膜的辐照响应分别在室温和500 ℃下通过氦轰击以1 × 1017离子/cm 2的注量探索。随着辐照温度的升高，氦泡向空穴转化，异质界面、新形成的晶界和三重结处空穴的不同形貌归因于缺陷扩散偏好和热致界面迁移。
Interface engineering is a significant strategy to develop structural materials with good properties. In this study, bulk V/Cu nano-multilayers with different layer thicknesses were fabricated by cross accumulative roll bonding (CARB). Interface stability of V/Cu nano-multilayers with different layer thicknesses and their effects on thermal conductivity and helium irradiation have been explored. The microstructure analysis, tensile and hardness tests result show that V/Cu nano-multilayers maintain high mechanical properties and good thermal stability after annealing at 500 degrees C for 1 h. However, the strength drastically degrades after higher-temperature annealing because of microstructure instability, which is closely related to the aspect ratio of grains. Furthermore, spheroidization occurring in multilayer during the annealing process promotes efficient electron transportation and weakens electron scattering, which benefits the increase of thermal conductivity. The irradiation response of V/Cu nano-multilayers was explored by helium bombardment with a fluence of 1 x 1017 ions/cm2 at room temperature and 500 degrees C, respectively. Helium bubbles transform to gas cavities with increasing irradiated temperature, and different morphology of cavities at heterointerface, newly formed grain boundaries and triple junctions is attributed to the defect diffusion preference combined with thermal-induced interfaces migration.