Properties of Sn-doped In/sub 2/O/sub 3/ films prepared by rf sputtering (solar energy collector)
Properties of Sn-doped In/sub 2/O/sub 3/ films prepared by rf sputtering (solar energy collector)
复制标题
射频溅射制备Sn掺杂In/sub 2/O/sub 3/薄膜的性能（太阳能集热器）
DOI：
10.1149/1.2134117
复制
发表时间：
1975
影响因子：
3.9
通讯作者：
F. Bachner
中科院分区：
文献类型：
--
作者：
J. Fan;F. Bachner
采用射频溅射工艺制备了低电阻率（低至2 × 10 - 4/ ohm-cm）、高可见光透过率和高红外反射率（在10 ℃时高达93%）的掺锡In/sub 2/O/sub 3/薄膜，并对其进行了热处理。Mu.. m）用作透明导体和热镜。基板加热是完全由射频溅射固有的电子轰击，而不是通过使用辅助电阻加热器。膜的性能改善与衬底温度增加到650/sup 0/C，最大采用，是相对独立的其他溅射参数。薄膜的电学和光学性质不显著依赖于晶体取向、织构程度或衬底材料。
An rf sputtering process was used without postdeposition annealing to prepare Sn-doped In/sub 2/O/sub 3/ films with low electrical resistivity (down to 2 x 10/sup -4/ ohm-cm), high visible transmission, and high infrared reflectivity (up to 93 percent at 10 ..mu..m) for applications as transparent conductors and heat mirrors. Substrate heating is accomplished entirely by the electron bombardment intrinsic to rf sputtering, rather than by using an auxiliary resistance heater. The film properties improve with increasing substrate temperature up to 650/sup 0/C, the maximum employed, and are relatively independent of other sputtering parameters. The electrical and optical properties of the films do not depend significantly on the crystallographic orientation, degree of texture, or substrate material.