Recombination processes in CdTe quantum-dot-doped glasses
Recombination processes in CdTe quantum-dot-doped glasses
复制标题
DOI：
10.1063/1.1801683
复制
发表时间：
2004-10-11
影响因子：
4
通讯作者：
Cruz, CHB
中科院分区：
文献类型：
--
作者：
Padilha, LA;Neves, AAR;Cruz, CHB
利用光致发光和共振飞秒泵浦探测技术研究了CdTe量子点中的电子空穴复合。复合时间与泵浦脉冲强度的依赖关系被观察到，我们把这归因于俄歇复合过程。我们观察到的整体动力学过程是从初始激发态到表面陷阱态的快速衰减，俄歇复合，电子从表面态的复合，以及我们归因于深陷阱态中的电子的较长时间的复合。(C)2004年，美国物理学会。
Electron-hole recombination in CdTe quantum dots was studied by photoluminescence and resonant femtosecond pump-probe measurements. A dependence of recombination times with pump pulse intensity was observed and we attribute this to the Auger recombination process. The overall kinetic processes that we observed are a fast decay from the initial excited state to surface trap states, the Auger recombination, the recombination of electrons from the surface states, and a longer time recombination which we attribute to electrons in the deep traps states. (C) 2004 American Institute Of Physics.