Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures
Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures
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DOI：
10.1016/j.mejo.2005.04.039
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发表时间：
2005-07-01
影响因子：
2.2
通讯作者：
Bourouina, T
中科院分区：
文献类型：
--
作者：
Marty, F;Rousseau, L;Bourouina, T
提出了利用感应耦合等离子体反应器进行深度反应离子刻蚀或各向同性刻蚀硅的不同工艺。一方面，在亚微米沟槽上获得了高深宽比的微结构，其高深宽比高达107。介绍了其在光子MEMS中的应用。各向同性腐蚀也可以单独使用或与各向异性腐蚀结合使用，以实现各种3D形状。(C)2005爱思唯尔有限公司。保留所有权利。
Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio microstructures with aspect ratio up to 107 were obtained on sub-micron trenches. Application to photonic MEMS is presented. Isotropic etching is also used either alone or in combination with anisotropic etching to realize various 3D shapes. (c) 2005 Elsevier Ltd. All rights reserved.