Identification of lattice vacancies on the two sublattices of SiC.
Identification of lattice vacancies on the two sublattices of SiC.
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DOI：
10.1103/physrevlett.89.185501
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发表时间：
2002-10
影响因子：
8.6
通讯作者：
A. Rempel;W. Sprengel;K. Blaurock;K. J. Reichle;J. Major;H. Schaefer
中科院分区：
文献类型：
--
作者：
A. Rempel;W. Sprengel;K. Blaurock;K. J. Reichle;J. Major;H. Schaefer
固体中原子缺陷的识别对于理解原子过程和固态特性至关重要。在这里，我们报告了通过利用（i）电子辐射，（ii）正电子寿命的测量，（iii）正电子-电子湮灭辐射的同步多普勒展宽研究，以及（iv）实验数据与理论研究的比较，对SiC的两个亚晶格中的每一个上的空位进行示例性识别。 0.3 MeV 电子辐照后，识别出碳空位 V(C)，其中，0.5 MeV 电子辐照后，主要观察到硅空位 V(Si)。 2.5 MeV 照射后，检测到双空位 V(Si)-V(Si)。目前的结果预计对于复杂固体中缺陷和原子过程的可靠识别具有普遍重要性。
The identification of atomic defects in solids is of pivotal interest for understanding atomistic processes and solid state properties. Here we report on the exemplary identification of vacancies on each of the two sublattices of SiC by making use of (i) electron irradiation, (ii) measurements of the positron lifetimes, (iii) coincident Doppler broadening studies of the positron-electron annihilation radiation, and (iv) a comparison of the experimental data with theoretical studies. After 0.3 MeV electron irradiation, carbon vacancies V(C) are identified, where, after 0.5 MeV electron irradiation, predomi-nantly silicon vacancies V(Si) are observed. After 2.5 MeV irradiation, divacancies V(Si)-V(Si) are detected. The present results are expected to be of general importance for reliable identification of defects and atomic processes in complex solids.