Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing
Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing
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DOI：
10.1002/pssa.201431777
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发表时间：
2015-04-01
影响因子：
2
通讯作者：
Udono, Haruhiko
中科院分区：
文献类型：
--
作者：
Mori, Masahiro;Shimotsuma, Yasuhiko;Udono, Haruhiko
采用双脉冲结构的红外超短脉冲激光器可以成功地实现半导体内部的周期性纳米结构。只有当半导体是间接带隙半导体时，才能在经验上诱导出半导体内部的自组织纳米结构。宽度约为100nm的应变硅区与第一到达脉冲的极化方向平行自对准，而与第二到达脉冲的极化方向相反。AFM检测表明，这种应变硅纳米结构具有高导电性和低导热性。电子-空穴等离子体与声子相互作用产生的电致伸缩力可以解释其形成机制。除了基本的理解之外，这种纳米结构的硅将为制造独立的热电器件打开大门。
The periodic nanostructuring of inner part of semiconductors can be successfully accomplished by the infrared ultrashort pulse laser with a double pulse configuration. Self-organized nanostructures inside semiconductor could be induced empirically only if it is indirect band gap semiconductor. The strained silicon regions with a width of about 100nm are self-aligned parallel to the polarization direction of the first arriving pulses, despite of the polarization direction of the secondly arriving pulses. AFM inspections reveal that such strained silicon nanostructures exhibit high electric conductivity and low thermal conductivity. The formation mechanisms would be interpreted in terms of the electrostrictive force through the interaction between electron-hole plasma and phonon. Apart from the basic understanding, such nanostructured silicon will open the door to the fabrication of the self-contained thermoelectric devices.