PREPARATION OF YBBA2CU3O7-X FILMS ON SI(100) SUBSTRATES USING SRTIO3 BUFFER LAYERS
PREPARATION OF YBBA2CU3O7-X FILMS ON SI(100) SUBSTRATES USING SRTIO3 BUFFER LAYERS
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DOI：
10.1063/1.107517
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发表时间：
1992-09-21
影响因子：
4
通讯作者：
NOHIRA, H
中科院分区：
文献类型：
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作者：
ISHIWARA, H;TSUJI, N;NOHIRA, H
本文报道了以SrTiO_3薄膜为缓冲层在Si（100）衬底上制备YbBa_2Cu_3 O_（7-x）超导薄膜。采用聚焦电子束蒸发法在Si衬底上制备SrTiO_3缓冲层，采用直流电弧蒸发法制备YbBa_2Cu_3 O_（7-x）薄膜。结果表明，SrTiO_3薄膜能有效地将Si（100）衬底的结晶信息传递到YbBa_2Cu_3 O_（7-x）薄膜中，并能有效地阻止Si原子扩散到薄膜中。薄膜的最高T（c）（零）为73 K。
We report that superconducting YbBa2Cu3O7-x films are formed on Si(100) substrates using SrTiO3 films as buffer layers. SrTiO3 buffer layers are prepared on Si using a focused electron beam evaporation method, while YbBa2Cu3O7-x films are prepared using a dc arc discharge evaporation method. It has been shown that the SrTiO3 thin film is effective to transmit the crystalline information of a Si (100) substrate to the YbBa2Cu3O7-x film and to block the diffusion of Si atoms into the film. The highest T(c) (zero) of the film was 73 K.