Effects of strain on boron diffusion in Si and Si1−xGex
Effects of strain on boron diffusion in Si and Si1−xGex
复制标题
应变对 Si 和 Si1−xGex 中硼扩散的影响
DOI：
10.1063/1.114019
复制
发表时间：
1995
影响因子：
4
通讯作者：
D. Lefforge
中科院分区：
文献类型：
--
作者：
P. Kuo;J. Hoyt;J. Gibbons;J. Turner;D. Lefforge
研究了硼在原位掺杂的Si 1 −xGex和Si中的扩散，并在800 °C下进行惰性气氛炉退火。对于Si 1 −xGex，使用在不同弛豫Si 1 −yGey（0≤y≤0.20）衬底上外延生长的具有恒定Ge含量（x ≤ 0.10和x ≤ 0.20）的Si 1 −xGex层，研究了双轴压应变和拉伸应变对硼扩散的影响。硼的扩散主要取决于Si 1 −xGex层中的Ge含量x，并不表现出对宏观双轴应变的强烈依赖。对于硅，双轴张力的影响进行了研究，使用弛豫Si1−yGey层作为衬底模板的外延硅层。与Si 1 −xGex一样，Si中的硼扩散并不强烈依赖于双轴应变。
Boron diffusion in in situ doped Si1−xGex and Si, subjected to inert‐ambient furnace annealing at 800 °C, was investigated. For Si1−xGex, the effect of biaxial compressive and tensile strain on boron diffusion was studied using Si1−xGex layers with a constant Ge content (x≊0.10 and x≊0.20) grown epitaxially on various relaxed Si1−yGey (0≤y≤0.20) substrates. Boron diffusion is primarily a function of Ge content, x in the Si1−xGex layers, and does not show a strong dependence on macroscopic biaxial strain. For Si, the effect of biaxial tension was investigated using relaxed Si1−yGey layers as substrate templates for epitaxial Si layers. As in Si1−xGex, boron diffusion in Si does not depend strongly on biaxial strain.