Long-range pair transport in graded band gap and its applications
Long-range pair transport in graded band gap and its applications
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DOI：
10.1016/j.jlumin.2005.12.010
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发表时间：
2006-07
影响因子：
3.6
通讯作者：
M. Shimizu
中科院分区：
文献类型：
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作者：
M. Shimizu
研究了电子-空穴对在混晶半导体梯度带隙中的输运。据估计，在低温AlGaAs量子阱中，在1 meV/μm的带隙梯度下，一对能带在其寿命内可转移约30μm。提出了利用对输运的各种光电器件。作为一个令人兴奋的应用，作者提出了量子上变频器，将非相干低能光子转换为高能光子。
The transport of electron–hole pairs in graded band gap of mixed crystal semiconductors is examined. It is estimated that a pair can be transferred for about 30μm within its lifetime in the band gap gradient of 1meV/μm in the low-temperature AlGaAs quantum well. Various opto-electronic devices by means of the pair transport are proposed. As one of exciting applications, the author proposes the quantum up-converter, where incoherent low-energy photons are converted to high-energy photons.