Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy
Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy
复制标题
通过光致发光光谱跟踪 AlGaN 整个成分范围内的点缺陷
DOI：
10.1002/pssa.202200390
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Sitar, Zlatko
中科院分区：
文献类型：
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作者：
Hyun Kim, Ji;Bagheri, Pegah;Kirste, Ronny;Reddy, Pramod;Collazo, Ramón;Sitar, Zlatko
A comprehensive energy map as a function of AlGaN composition over the whole alloy range is presented for commonly observed point defects in nominally intrinsic, n‐, and p‐doped material. The map covers intentional and unintentional impurities (CN, MgIII), vacancies (VIII, VN), passivating complexes (H), and self‐compensating complexes. The tracking of these defects is crucial to understand their impact on optical and electrical properties as well as for their mitigation.
