Zn‐aided defect control for ultrathin GZO films with high carrier concentration aiming at alternative plasmonic metamaterials
Zn‐aided defect control for ultrathin GZO films with high carrier concentration aiming at alternative plasmonic metamaterials
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DOI：
10.1002/pssa.201431765
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发表时间：
2015-08
期刊：
影响因子：
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通讯作者：
Chaoting Zhu;Jia Li;Ye Yang;Jinhua Huang;Yuehui Lu;R. Tan;N. Dai;Weijie Song
中科院分区：
文献类型：
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作者：
Chaoting Zhu;Jia Li;Ye Yang;Jinhua Huang;Yuehui Lu;R. Tan;N. Dai;Weijie Song
在本工作中，采用磁控溅射法在玻璃衬底上制备了（0-10 nm）Zn/100 nm ZnO：Ga异质结薄膜，并在500 °C下进行了1 min的快速热退火（RTA），消除了Zn空位缺陷，显著提高了载流子浓度。沉积不同厚度的Zn时，只有8 nm Zn/100 nm GZO薄膜的载流子浓度最高，为1.02 × 1021 cm-3，电阻率最低，为4.0 × 10 - 4 Ω cm。更高的电子浓度使真实的介电常数的零交叉移动到1.3 μm以下，这证实了近红外（NIR）范围内的金属类光学特性。在这些退火的Zn/GZO薄膜的光学损耗是四倍小于传统的银膜在近红外。所有退火的GZO薄膜在可见光范围内的平均透过率均在84%以上。通过这种方法沉积的GZO薄膜是用于在NIR中操作的等离子体激元器件的传统金属的有前途的低损耗替代材料。
In this work, (0–10 nm) Zn/100 nm ZnO:Ga ultrathin films are deposited on glass substrate at room temperature by magnetron sputtering, with a post‐rapid thermal annealing (RTA) at 500 °C for 1 min, which causes a dramatic improvement in carrier concentration due to elimination of Zn‐vacancy defects. Depositing different Zn thickness, only 8 nm Zn/100 nm GZO thin film exhibits the highest carrier concentration of 1.02 × 1021 cm−3 and the lowest resistivity of 4.0 × 10−4 Ω cm. Higher electronic concentration shifts the zero‐crossover of the real permittivity below 1.3 μm, which confirms the metal‐like optical properties in the near‐infrared (NIR) range. Optical losses in these annealed Zn/GZO films are four times smaller than conventional Ag films in the NIR. The average transmittances of all the annealed GZO thin films were above 84% in the visible range. The GZO ultrathin film deposited by this method is a promising low‐loss alternative material to conventional metals for plasmonic devices operating in the NIR.