Removal Rate of Phosphorus from Molten Silicon
Removal Rate of Phosphorus from Molten Silicon
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DOI：
10.1515/htmp.2011.002
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
T. Kemmotsu;T. Nagai;M. Maeda
中科院分区：
文献类型：
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作者：
T. Kemmotsu;T. Nagai;M. Maeda
摘要高真空电子束熔炼技术是硅中除磷的有效方法，但其除磷速率还不理想。为了提高废水的去除率，研究了四个实验因素对去除率的影响。提高硅液表面温度是有效的，在真空室中施加残余气体压力和搅拌硅液都不能提高硅液的速率，而向硅液中提供反应物气体有一定的效果。
Abstract An electron beam melting technique under high vacuum is known to be effective for the removal of phosphorus from silicon, however, the rate of removal is not yet adequate. In order to improve the removal rate, the effects of four experimental factors on this rate were investigated. Raising temperature of the surface of molten silicon provide effective, neither residual gas pressure in a vacuum chamber nor stirring molten silicon improve the rate, while supplying reactant gas to molten silicon had some effect.