Lateral control of self-assembled island nucleation by focused-ion-beam micropatterning
Lateral control of self-assembled island nucleation by focused-ion-beam micropatterning
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DOI：
10.1063/1.1542680
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发表时间：
2003-02-17
影响因子：
4
通讯作者：
Ross, FM
中科院分区：
文献类型：
--
作者：
Kammler, M;Hull, R;Ross, FM
我们证明，Si(001) 上纳米级自组装 Ge 岛的成核位点可以通过使用聚焦离子束原位对 Si 表面进行图案化来控制。每 6000 个 Ga+ 离子的低剂量
We demonstrate that the nucleation sites of nanoscale, self-assembled Ge islands on Si(001) can be controlled by patterning the Si surface in situ with a focused ion beam. At low doses of 6000 Ga+ ions per