Extraction of low-frequency noise in contact resistance of organic field-effect transistors
Extraction of low-frequency noise in contact resistance of organic field-effect transistors
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DOI：
10.1063/1.3467057
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发表时间：
2010-07
影响因子：
4
通讯作者：
Yong Xu;T. Minari;K. Tsukagoshi;R. Gwoziecki;R. Coppard;F. Balestra;J. Chroboczek;G. Ghibaudo
中科院分区：
文献类型：
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作者：
Yong Xu;T. Minari;K. Tsukagoshi;R. Gwoziecki;R. Coppard;F. Balestra;J. Chroboczek;G. Ghibaudo
通过传输线法评估有机晶体管接触电阻 SRsd 低频噪声的功率谱密度。然后，所获得的与栅极电压相关的 SRsd 通过接触电阻的平方进行归一化，接触电阻是从直流电流-电压 (I-V) 测量中提取的。归一化后，在 p 型和 n 型器件中，20 Hz 时，相对于栅极电压的 SRsd/Rsd2 分别在 10−7–10−6 μm/Hz 范围内获得轻微变化和几乎恒定的 SRsd/Rsd2。事实证明，该方法适合分别研究通道和接触区域中噪声源的来源。
The power spectral density of low-frequency noise in contact resistance, SRsd, of organic transistors is evaluated by the transfer-line method. The obtained gate-voltage dependent SRsd is then normalized by the square of contact resistance, which is extracted from dc current-voltage (I-V) measurements. After normalization, slightly variable and nearly constant SRsd/Rsd2 with respect to gate voltage are obtained in the range 10−7–10−6 μm/Hz at 20 Hz in p-type and n-type devices, respectively. This method proves suitable to investigate separately the origin of the noise sources in channel as well as in contact region.