Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots
Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots
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DOI：
10.1021/acs.jpcc.6b12343
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发表时间：
2017-03
影响因子：
3.7
通讯作者：
C. Yuan;Y. Mei;A. Hong;Ting Yu;Yong Yang;Fanyan Zeng;Keng Xu;Qinliang Li;Xingfang Luo
中科院分区：
文献类型：
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作者：
C. Yuan;Y. Mei;A. Hong;Ting Yu;Yong Yang;Fanyan Zeng;Keng Xu;Qinliang Li;Xingfang Luo
了解量子点（QD）的应变和物理性质之间的物理关系对于技术应用至关重要。本文采用脉冲激光沉积法和快速热退火技术合成了Al_2O_3基质中的GaAs量子点。结果表明，受限的GaAs量子点在生长过程中经历压应变。通过将带隙和光致发光发射带设计为不同的波长，应变可以用于改善和定制受限GaAs QD的光学性质。这些发现可以设计GaAs量子点的性质，以在光电和光子器件中具有潜在的应用。
Understanding the physics that correlate strain and physical properties of quantum dots (QDs) is crucial for technology applications. In this paper, GaAs QDs confined in Al2O3 matrix are synthesized using the pulsed laser deposition method and rapid thermal annealing technique. It is revealed that the confined GaAs QDs experience compressive strain during the growth process. The strain can be used to improve and tailor the optical properties of confined GaAs QDs by engineering the bandgap and thus the photoluminescence emission band to a distinct wavelength. These findings presented here can engineer the properties of GaAs QDs for potential application in optoelectronic and photonic devices.